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process for producing silicon carbide

1995-4-10 · We claim: 1. A process for producing a silicon carbide material comprising the steps of: reacting a carbon material consisting essentially of activated porous carbon fibers, said fibers having a specific surface area of 100 to 2500 m 2 /g, with a silicon monoxide gas at a temperature of 800° C. to 2000° C., and heat-treating the resultant porous silicon carbide material in a non-oxidative

process for producing silicon carbide material - new oji

process for producing silicon carbide material - new oji

1995-4-10 · We claim: 1. A process for producing a silicon carbide material comprising the steps of: reacting a carbon material consisting essentially of activated porous carbon fibers, said fibers having a specific surface area of 100 to 2500 m 2 /g, with a silicon monoxide gas at a temperature of 800° C. to 2000° C., and heat-treating the resultant porous silicon carbide material in a non-oxidative

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us20110135558a1 - process for producing silicon carbide

us20110135558a1 - process for producing silicon carbide

A process for producing porous silicon carbide comprising mixing particles of silicon carbide reactant with particles of carbon, and calcining the mixture in an atmosphere comprising molecular oxygen at a temperature in excess of 950° C., wherein the silicon carbide:carbon mass ratio in the mixture is in the range of from 5:1 to 1:10

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silicon carbide manufacturing process - gab neumann

silicon carbide manufacturing process - gab neumann

2021-8-7 · The simplest manufacturing process for producing silicon carbide is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1600°C (2910°F) and 2500°C (4530°F). Fine silicon particles can be converted to silicon carbide (SiC) by heating in the excess carbon from the organic material

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process for producing silicon carbide single crystal

process for producing silicon carbide single crystal

The process for producing the silicon carbide single crystal of claim 1, wherein the undulation ridges are on undulations that extend in the first direction, the undulations having alternating peaks and valleys on the single crystal substrate surface, wherein a relationship between a peak-peak period and a peak-valley height of the undulations

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process for producing silicon carbide ceramic - sgl carbon ag

process for producing silicon carbide ceramic - sgl carbon ag

A process uses ground wood charcoal having a particle size of not more than 40 μm as a starting material for producing dense, compact, homogeneous and isotropic ceramic bodies containing a high content of silicon carbide and a geometric density of at least 2.80 g/cm 3.A homogeneous mixture is formed from the ground wood charcoal and a carbonizable binder for forming the ceramic bodies

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process for producing a silicon carbide powder - nippon

process for producing a silicon carbide powder - nippon

A process for producing a silicon carbide powder by reacting a gaseous silicon compound or particulate silicon with a gaseous carbon compound, in which acetylene of a by-product of said reaction is monitored so as to detect in real time a free carbon content in the silicon carbide powder produced, and said reaction is controlled such that the

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us6635215b2 - process for producing silicon carbide

us6635215b2 - process for producing silicon carbide

Polycarbosilane is mixed with 5-35 wt % of polyvinylsilane to prepare a silicon-base polymer blend which is impregnated in silicon carbide fibers or fabrics to form a preceramic molding body which is exposed to an ionizing radiation to be rendered curing and then fired in an inert gas to produce a composite in which the silicon carbide matrix is reinforced with the silicon carbide fibers

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us4336216a - process for producing silicon carbide heating

us4336216a - process for producing silicon carbide heating

A process for producing silicon carbide heating elements is described comprising: a primary sintering wherein a mixture including SiC powder, boron or a boron compound, and carbon or a carbon compound in specific proportions, is molded and sintered to obtain a sintered product having from 70 to 95% of the theoretical density; and a secondary sintering wherein the sintered product obtained in

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sic production process | washington mills

sic production process | washington mills

2021-7-22 · Silicon carbide crude is produced by mixing silica (SiO2) with carbon (C) in an electric resistance furnace at temperatures around 2,500 C. The chemical reaction in the SiC process may be represented by the formula: SiO2 + 3C SiC + 2CO. Washington Mills employs two different manufacturing methods for producing SiC crude: the traditional Acheson

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us patent for process for producing silicon carbide

us patent for process for producing silicon carbide

2019-4-29 · A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration

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process for producing high-resistance silicon carbide

process for producing high-resistance silicon carbide

A process for producing high-resistance SiC from low-resistance SiC starting material. The flat (shallow) donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent doping element with the concentration of the doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity

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development of a continuous spinning process for producing

development of a continuous spinning process for producing

Development of a continuous spinning process for producing silicon carbide - silicon nitride precursor fibers An apparatus was designed for the continuous production of silicon carbide - silicon nitride precursor fibers. The precursor polymer can be fiberized, crosslined and pyrolyzed

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(pdf) production of silicon carbide via grinding and heat

(pdf) production of silicon carbide via grinding and heat

Another component in producing silicon carbide based on this research study is graphite. Graphite materials demonstrate low density but their thermal conductivity is within the range of conductivity of metals (between unalloyed steel and aluminium), wide electrochemical window, long-term stability, and low residual current [5]

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silicon carbide | washington mills

silicon carbide | washington mills

2021-7-22 · Washington Mills is an expert at manufacturing silicon carbide grains and powders. Our CARBOREX grains and powders are made to your exact size, chemistry, and shape specification. We control the manufacturing process for silicon carbide offering a unique ability to customize materials to your toughest specification

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an improved process for preparing tris(n-methylamino

an improved process for preparing tris(n-methylamino

An improved process for preparing Tris(N-methylamino)methylsilane monomer for use in producing silicon carbide-silicon nitride fibers A technique is described for the preparation of tris(N-methylamino)methylsilane by a process which may be used for large-scale production. The steps include synthesis, filtration to remove the salt byproduct, and distillation to remove the product from the

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porous object based on silicon carbide and process for

porous object based on silicon carbide and process for

Justia Patents Of Silicon-containing Material (e.g., Glass, Etc.) US Patent for Porous object based on silicon carbide and process for producing the same Patent (Patent # 7,781,053)

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low cost solar array project. feasibility of the silane

low cost solar array project. feasibility of the silane

OSTI.GOV Technical Report: Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

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